Richardson RFPD Silicon Carbide MOSFETs C3M0021120K

Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies Load switch