Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. The new family includes the lowest Rds(on) at 1200V in a discrete package with a flat Rds(on) over temperature. Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.
Features
Proven and reliable 3rd generation planar MOSFET with rugged intrinsic Body Diode (no need for external diode)
Minimum of 1200V Vbr across entire operating temperature range [-40C – 175C]
Easy to implement – MOSFET fully on at +15V gate drive
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
Applications
Solar energy systems
EV-Charging
Uninterruptible power supply (UPS)
SMPS
Motor Control and Drives
Energy storage
Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. The new family includes the lowest Rds(on) at 1200V in a discrete package with a flat Rds(on) over temperature. Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.
Features
- Proven and reliable 3rd generation planar MOSFET with rugged intrinsic Body Diode (no need for external diode)
- Minimum of 1200V Vbr across entire operating temperature range [-40C – 175C]
- Easy to implement – MOSFET fully on at +15V gate drive
- High-speed switching with low output capacitance
- High blocking voltage with low RDS(on)
- Fast intrinsic diode with low reverse recovery (Qrr)
- Easy to parallel and simple to drive
Applications
- Solar energy systems
- EV-Charging
- Uninterruptible power supply (UPS)
- SMPS
- Motor Control and Drives
- Energy storage
