Richardson RFPD Silicon Carbide MOSFETs C2M1000170D

Description
C2M1000170D is ideal for power supplies to 200W operating from DC inputs from 200V to 1000V. This product beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and reliability while lowering system implementation cost. High blocking voltage assure: Safe operation in electrically noisy systems Simpler design: remove snubbers, low part count Avalanche rating for system ruggedness, reliability Reduced thermal design complexity, cost Fast switching system size, weight and cost
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Description
C2M1000170D is ideal for power supplies to 200W operating from DC inputs from 200V to 1000V. This product beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and reliability while lowering system implementation cost. High blocking voltage assure: Safe operation in electrically noisy systems Simpler design: remove snubbers, low part count Avalanche rating for system ruggedness, reliability Reduced thermal design complexity, cost Fast switching system size, weight and cost
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C2M1000170D
Silicon Carbide MOSFETs C2M1000170D
C2M1000170D is ideal for power supplies to 200W operating from DC inputs from 200V to 1000V. This product beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and reliability while lowering system implementation cost. High blocking voltage assure: Safe operation in electrically noisy systems Simpler design: remove snubbers, low part count Avalanche rating for system ruggedness, reliability Reduced thermal design complexity, cost Fast switching system size, weight and cost

C2M1000170D is ideal for power supplies to 200W operating from DC inputs from 200V to 1000V. This product beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and reliability while lowering system implementation cost.

  • High blocking voltage assure:
    • Safe operation in electrically noisy systems
    • Simpler design: remove snubbers, low part count
  • Avalanche rating for system ruggedness, reliability
  • Reduced thermal design complexity, cost
  • Fast switching system size, weight and cost
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number C2M1000170D
Product Name Silicon Carbide MOSFETs
rDS(on) 1 ohms
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