2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET
Features
High Speed Switching with Low Capacitances
High Blocking Voltage with Low RDS(on)
Easy to Parallel and Simple to Drive
Resistant to Latch-Up
Avalanche ruggedness
2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET
Features
- High Speed Switching with Low Capacitances
- High Blocking Voltage with Low RDS(on)
- Easy to Parallel and Simple to Drive
- Resistant to Latch-Up
- Avalanche ruggedness
