Richardson RFPD Power MOSFET Transistor APT60N60BCSG

APT60N60BCSG is a Super Junction MOSFET in a TO-247 package, designed for high-efficiency switching applications. It has a drain-source voltage rating of 600 V, a continuous drain current of 60 A at 25°C, and a maximum on-state resistance of 0.045 Ω at VGS = 10 V and ID = 44 A. The device supports a pulsed drain current of 1230 A, a gate-source voltage of ±30 V, and a total power dissipation of 431 W at TC = 25°C. It features avalanche energy ratings of 1950 mJ for single pulse and 3 mJ for repetitive pulses, with a dv/dt ruggedness of 50 V/ns. The junction temperature range is -55°C to 150°C, and the thermal resistance from junction to case is 0.29°C/W. The part is RoHS compliant, as indicated by the G suffix.