Richardson RFPD Power IGBT Transistor APT60GT60JRD

Description
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
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Description
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
Request a Quote
Datasheet
Datasheet Summary
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The APT60GT60JRD is a 600V, 93A IGBT with a built-in fast recovery diode, packaged in an SOT-227 (ISOTOP®) format. It features a maximum collector-emitter voltage of 600V, a continuous collector current of 93A at 25°C, and a total power dissipation of 378W. The device is rated for junction temperatures from -55°C to 150°C and has a thermal resistance from junction to case of 0.33°C/W for the IGBT. It supports switching frequencies up to 150kHz, exhibits low forward voltage drop and tail current, and is rated for RBSOA and avalanche operation. The part complies with UL 94 V-0 and is AEC-Q200 qualified. Mounting torque is specified at 1.5 N·m, and the package weighs 29.2g.

Datasheet Summary
Powered by GS/AI

The APT60GT60JRD is a 600V, 93A IGBT with a built-in fast recovery diode, packaged in an SOT-227 (ISOTOP®) format. It features a maximum collector-emitter voltage of 600V, a continuous collector current of 93A at 25°C, and a total power dissipation of 378W. The device is rated for junction temperatures from -55°C to 150°C and has a thermal resistance from junction to case of 0.33°C/W for the IGBT. It supports switching frequencies up to 150kHz, exhibits low forward voltage drop and tail current, and is rated for RBSOA and avalanche operation. The part complies with UL 94 V-0 and is AEC-Q200 qualified. Mounting torque is specified at 1.5 N·m, and the package weighs 29.2g.

Suppliers

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Product
Description
Supplier Links
Power IGBT Transistor - APT60GT60JRD - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APT60GT60JRD
Power IGBT Transistor APT60GT60JRD
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number APT60GT60JRD
Product Name Power IGBT Transistor
Package Type SOT-227
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