Richardson RFPD Power MOSFET Transistor APT50M50JVR

Description
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
  • Power MOSFET Transistor - APT50M50JVR - Richardson RFPD
    Richardson RFPD
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Description
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
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Power MOSFET Transistor - APT50M50JVR - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power MOSFET Transistor
APT50M50JVR
Power MOSFET Transistor APT50M50JVR
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

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Technical Specifications

  Richardson RFPD
Product Category Power MOSFET
Product Number APT50M50JVR
Product Name Power MOSFET Transistor
rDS(on) 0.0500 ohms
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