Richardson RFPD Power MOSFET Transistor APT5025BNG

The APT5025BNG is an N-channel enhancement mode high voltage power MOSFET in a TO-247 package, rated for a drain-source voltage of 500 V and a continuous drain current of 23 A at 25°C. It has a maximum on-state resistance of 0.25 Ω at VGS = 10 V and 0.5 × ID[Cont.], with a gate threshold voltage ranging from 2 to 4 V. The device dissipates up to 310 W at 25°C, with a thermal derating factor of 2.48 W/°C, and operates over a junction temperature range of -55°C to 150°C. The junction-to-case thermal resistance is 0.40°C/W. The body diode has a forward voltage of 1.3 V at rated current, with reverse recovery time up to 640 ns and charge up to 11 mC. The package dimensions conform to the TO-247AD outline. The device is sensitive to electrostatic discharge and requires proper handling procedures.