The APT5010JN is an N-channel enhancement mode high voltage power MOSFET in the ISOTOP® package, designed for high power switching applications. It has a drain-source voltage rating of 500V and a continuous drain current of 48A at 25°C. The part features a maximum on-state drain-source resistance of 0.10 ohms at 10V gate-source voltage and a total power dissipation of 520W at 25°C. Thermal resistance from junction to case is 0.24°C/W. The device operates over a junction temperature range of -55°C to 150°C and meets UL 94 V-0 flammability requirements. The ISOTOP® package measures 31.7 x 25.4 x 4.9 mm and provides 2500V RMS isolation between terminals and the mounting base.
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
| Richardson RFPD | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | APT5010JN |
| Product Name | Power MOSFET Transistor |
| rDS(on) | 0.1000 ohms |
