The APT10045JLL is a 1000 V, 21 A N-channel enhancement mode Power MOSFET with a drain-source on-state resistance of 0.450 Ω at V_GS = 10 V and I_D = 11.5 A. It is packaged in an ISOTOP® SOT-227 package and has a maximum total power dissipation of 460 W at 25 °C. The device supports a pulsed drain current of 84 A, a gate-source voltage of ±30 V continuous and ±40 V transient, and an operating junction temperature range from -55 °C to 150 °C. It features a single pulse avalanche energy rating of 2500 mJ and a repetitive avalanche energy rating of 50 mJ. The MOSFET meets UL 94 V-0 flammability requirements and is designed for low conduction and switching losses via a patented metal gate structure.
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
| Richardson RFPD | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | APT10045JLL |
| Product Name | Power MOSFET Transistor |
| rDS(on) | 0.4500 ohms |
