AFT09MS007NT1 is an N-channel enhancement-mode lateral MOSFET designed for handheld two-way radio amplifier applications from 136 to 941 MHz. It is packaged in a PLD-1.5W case with a 2.16 mm x 2.16 mm footprint and a backside source pad. The device operates with a drain-source voltage up to 30 Vdc and a maximum junction temperature of +150 °C. It dissipates up to 114 W at 25 °C case temperature with a thermal resistance of 1.1 °C/W. The transistor delivers 7.5 W output power across its bandwidth with drain efficiency up to 71% at 870 MHz. It features integrated ESD protection, stability enhancements, and extreme ruggedness, withstanding load VSWR greater than 65:1 without degradation. It meets JEDEC standards JESD22-A114 (HBM: 2500 V), EIA/JESD22-A115 (MM: 200 V), and JESD22-C101 (CDM: 2000 V), and is rated for moisture sensitivity level 3 (260 °C peak temperature).
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large-signal, common-source amplifier applications in handheld radio equipment.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | AFT09MS007NT1 |
| Product Name | RF Power Transistor |
| Package Type | Plastic SMT |
