RF Power LDMOS Transistor designed for handheld two-way radio applications from 136 to 941 MHz. Packaged in a SOT-89 case, it delivers up to 4.9 W output power at 520 MHz with 74.9% drain efficiency at 7.5 Vdc. The device features integrated ESD protection, stability enhancements, and exceptional thermal performance with a junction-to-case thermal resistance of 4.4 °C/W. It operates with a drain-source voltage up to 30 Vdc and a junction temperature range of -40 to +150 °C. The transistor is rated for 28 W total power dissipation at TC=25 °C and meets ESD standards per JESD22-A114 (Class 1C, 1000 V), EIA/JESD22-A115 (Class A, 100 V), and JESD22-C101 (Class IV, 2000 V). Moisture sensitivity level is IPC/JEDEC J-STD-020 Level 1 with a peak reflow temperature of 260 °C.
RF Power LDMOS Transistor. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | AFT05MS004NT1 |
| Product Name | RF Power Transistor |
| Package Type | Plastic SMT |
