Richardson RFPD RF and mmW Front End Module ADRF5547BCPZN-RL

Description
The ADRF5547 is a dual-channel, integrated radio frequency (RF), front end multichip module designed for time division duplexing (TDD) applications and that operates from 3.7 GHz to 5.3 GHz. The ADRF5547 is configured in dual channels with a cascading two-stage low noise amplifier (LNA) and a high power silicon single-pole, double-throw (SPDT) switch. In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.6 dB and high gain of 33 dB at 4.6 GHz with an output third order intercept point (OIP3) of 31 dBm (typical). In low gain mode, one stage of the two-stage LNAs is in bypass, providing 18 dB gain at lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA. In transmit operation, when RF inputs are connected to termination pin (TERM-ChA or TERM-ChB), the switch provides a low insertion loss of 0.5 dB and handles long term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 40 dBm for full lifetime operation and 43 dBm for single event (<10> The device comes in an RoHS-compliant, compact, 40-lead, 6 mm × 6 mm LFCSP package.
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Description
The ADRF5547 is a dual-channel, integrated radio frequency (RF), front end multichip module designed for time division duplexing (TDD) applications and that operates from 3.7 GHz to 5.3 GHz. The ADRF5547 is configured in dual channels with a cascading two-stage low noise amplifier (LNA) and a high power silicon single-pole, double-throw (SPDT) switch. In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.6 dB and high gain of 33 dB at 4.6 GHz with an output third order intercept point (OIP3) of 31 dBm (typical). In low gain mode, one stage of the two-stage LNAs is in bypass, providing 18 dB gain at lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA. In transmit operation, when RF inputs are connected to termination pin (TERM-ChA or TERM-ChB), the switch provides a low insertion loss of 0.5 dB and handles long term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 40 dBm for full lifetime operation and 43 dBm for single event (<10> The device comes in an RoHS-compliant, compact, 40-lead, 6 mm × 6 mm LFCSP package.
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Suppliers

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RF and mmW Front End Module - ADRF5547BCPZN-RL - Richardson RFPD
Downers Grove, IL, United States
RF and mmW Front End Module
ADRF5547BCPZN-RL
RF and mmW Front End Module ADRF5547BCPZN-RL
The ADRF5547 is a dual-channel, integrated radio frequency (RF), front end multichip module designed for time division duplexing (TDD) applications and that operates from 3.7 GHz to 5.3 GHz. The ADRF5547 is configured in dual channels with a cascading two-stage low noise amplifier (LNA) and a high power silicon single-pole, double-throw (SPDT) switch. In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.6 dB and high gain of 33 dB at 4.6 GHz with an output third order intercept point (OIP3) of 31 dBm (typical). In low gain mode, one stage of the two-stage LNAs is in bypass, providing 18 dB gain at lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA. In transmit operation, when RF inputs are connected to termination pin (TERM-ChA or TERM-ChB), the switch provides a low insertion loss of 0.5 dB and handles long term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 40 dBm for full lifetime operation and 43 dBm for single event (<10> The device comes in an RoHS-compliant, compact, 40-lead, 6 mm × 6 mm LFCSP package.

The ADRF5547 is a dual-channel, integrated radio frequency (RF), front end multichip module designed for time division duplexing (TDD) applications and that operates from 3.7 GHz to 5.3 GHz. The ADRF5547 is configured in dual channels with a cascading two-stage low noise amplifier (LNA) and a high power silicon single-pole, double-throw (SPDT) switch.

In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.6 dB and high gain of 33 dB at 4.6 GHz with an output third order intercept point (OIP3) of 31 dBm (typical). In low gain mode, one stage of the two-stage LNAs is in bypass, providing 18 dB gain at lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA.

In transmit operation, when RF inputs are connected to termination pin (TERM-ChA or TERM-ChB), the switch provides a low insertion loss of 0.5 dB and handles long term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 40 dBm for full lifetime operation and 43 dBm for single event (<10>

The device comes in an RoHS-compliant, compact, 40-lead, 6 mm × 6 mm LFCSP package.

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Technical Specifications

  Richardson RFPD
Product Category IC Interfaces
Product Number ADRF5547BCPZN-RL
Product Name RF and mmW Front End Module
Device Type Front End
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