Richardson RFPD RF and mmW Front End Module ADRF5545ABCPZN-RL

Description
The ADRF5545A is a dual-channel, integrated radio frequency (RF), front-end multichip module designed for time division duplexing (TDD) applications that operates from 2.4 GHz to 4.2 GHz. The ADRF5545A is configured in dual channels with a cascading two-stage low noise amplifier (LNA) and a high power silicon single-pole, double-throw (SPDT) switch. In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.45 dB and a high gain of 32 dB at 3.6 GHz with an output third-order intercept point (OIP3) of 32 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 16 dB of gain at a lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA. In transmit operation, when RF inputs are connected to a termination pin (TERM-CHA or TERM-CHB), the switch provides a low insertion loss of 0.65 dB and handles long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 40 dBm for full lifetime operation and 43 dBm for single event (<10> The device comes in an RoHS compliant, compact, 6 mm × 6 mm, 40-lead LFCSP package.
Request a Quote Datasheet
Description
The ADRF5545A is a dual-channel, integrated radio frequency (RF), front-end multichip module designed for time division duplexing (TDD) applications that operates from 2.4 GHz to 4.2 GHz. The ADRF5545A is configured in dual channels with a cascading two-stage low noise amplifier (LNA) and a high power silicon single-pole, double-throw (SPDT) switch. In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.45 dB and a high gain of 32 dB at 3.6 GHz with an output third-order intercept point (OIP3) of 32 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 16 dB of gain at a lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA. In transmit operation, when RF inputs are connected to a termination pin (TERM-CHA or TERM-CHB), the switch provides a low insertion loss of 0.65 dB and handles long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 40 dBm for full lifetime operation and 43 dBm for single event (<10> The device comes in an RoHS compliant, compact, 6 mm × 6 mm, 40-lead LFCSP package.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF and mmW Front End Module - ADRF5545ABCPZN-RL - Richardson RFPD
Downers Grove, IL, United States
RF and mmW Front End Module
ADRF5545ABCPZN-RL
RF and mmW Front End Module ADRF5545ABCPZN-RL
The ADRF5545A is a dual-channel, integrated radio frequency (RF), front-end multichip module designed for time division duplexing (TDD) applications that operates from 2.4 GHz to 4.2 GHz. The ADRF5545A is configured in dual channels with a cascading two-stage low noise amplifier (LNA) and a high power silicon single-pole, double-throw (SPDT) switch. In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.45 dB and a high gain of 32 dB at 3.6 GHz with an output third-order intercept point (OIP3) of 32 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 16 dB of gain at a lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA. In transmit operation, when RF inputs are connected to a termination pin (TERM-CHA or TERM-CHB), the switch provides a low insertion loss of 0.65 dB and handles long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 40 dBm for full lifetime operation and 43 dBm for single event (<10> The device comes in an RoHS compliant, compact, 6 mm × 6 mm, 40-lead LFCSP package.

The ADRF5545A is a dual-channel, integrated radio frequency (RF), front-end multichip module designed for time division duplexing (TDD) applications that operates from 2.4 GHz to 4.2 GHz. The ADRF5545A is configured in dual channels with a cascading two-stage low noise amplifier (LNA) and a high power silicon single-pole, double-throw (SPDT) switch.

In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.45 dB and a high gain of 32 dB at 3.6 GHz with an output third-order intercept point (OIP3) of 32 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 16 dB of gain at a lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA.

In transmit operation, when RF inputs are connected to a termination pin (TERM-CHA or TERM-CHB), the switch provides a low insertion loss of 0.65 dB and handles long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 40 dBm for full lifetime operation and 43 dBm for single event (<10>

The device comes in an RoHS compliant, compact, 6 mm × 6 mm, 40-lead LFCSP package.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category IC Interfaces
Product Number ADRF5545ABCPZN-RL
Product Name RF and mmW Front End Module
Device Type Front End
Unlock Full Specs
to access all available technical data

Similar Products

Interface - Transceiver - ADM3066EBCPZ - Richardson RFPD
Specs
Device Type Transceiver
View Details
Multi-Function Transceiver - ADAR2004ACCZ-R7 - Richardson RFPD
Specs
Device Type Transceiver
Supply Voltage 2.5V; Other; 2.5
Package Type LGA; LGA
View Details
Interface - Transceiver - ADM2865EBRNZ - Richardson RFPD
Specs
Device Type Transceiver
View Details
Interface - Transceiver - ADM2463EBRWZ-RL7 - Richardson RFPD
Specs
Device Type Transceiver
View Details