Richardson RFPD RF and Microwave Switch ADRF5424BCZ

Description
The ADRF5424 is a reflective, single-pole double-throw (SPDT)switch manufactured in a silicon process attached on a galliumarsenide (GaAs) carrier substrate. The substrate incorporates thebond pads for chip and wire assembly, and the bottom of the deviceis metalized, connected to ground. This device operates from 100 MHz to 60 GHz with better than1.5 dB of insertion loss and 35 dB of isolation at 55 GHz. TheADRF5424 has an RF input power handling capability of 27 dBm upto 40 GHz for both the through path and hot switching.
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Description
The ADRF5424 is a reflective, single-pole double-throw (SPDT)switch manufactured in a silicon process attached on a galliumarsenide (GaAs) carrier substrate. The substrate incorporates thebond pads for chip and wire assembly, and the bottom of the deviceis metalized, connected to ground. This device operates from 100 MHz to 60 GHz with better than1.5 dB of insertion loss and 35 dB of isolation at 55 GHz. TheADRF5424 has an RF input power handling capability of 27 dBm upto 40 GHz for both the through path and hot switching.
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Suppliers

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Product
Description
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RF and Microwave Switch - ADRF5424BCZ - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
ADRF5424BCZ
RF and Microwave Switch ADRF5424BCZ
The ADRF5424 is a reflective, single-pole double-throw (SPDT)switch manufactured in a silicon process attached on a galliumarsenide (GaAs) carrier substrate. The substrate incorporates thebond pads for chip and wire assembly, and the bottom of the deviceis metalized, connected to ground. This device operates from 100 MHz to 60 GHz with better than1.5 dB of insertion loss and 35 dB of isolation at 55 GHz. TheADRF5424 has an RF input power handling capability of 27 dBm upto 40 GHz for both the through path and hot switching.

The ADRF5424 is a reflective, single-pole double-throw (SPDT)switch manufactured in a silicon process attached on a galliumarsenide (GaAs) carrier substrate. The substrate incorporates thebond pads for chip and wire assembly, and the bottom of the deviceis metalized, connected to ground.

This device operates from 100 MHz to 60 GHz with better than1.5 dB of insertion loss and 35 dB of isolation at 55 GHz. TheADRF5424 has an RF input power handling capability of 27 dBm upto 40 GHz for both the through path and hot switching.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Switches
Product Number ADRF5424BCZ
Product Name RF and Microwave Switch
Package Type Die
Frequency Range 100 to 60000 MHz
Insertion Loss 1.3 dB
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