Richardson RFPD RF and Microwave Switch ADRF5026SCCZ-EP

Description
The ADRF5026-EP is a nonreflective, single-pole, double-throw (SPDT) RF switch manufactured in a silicon process. The ADRF5026-EP operates from 100 MHz to 44 GHz with better than 3.8 dB of insertion loss and 45 dB of isolation. The ADRF5026-EP features an all off control, where both RF ports are in an isolation state. The ADRF5026-EP has a nonreflective design and both of the RF ports are internally terminated to 50 Ohm. The ADRF5026-EP requires a dual-supply voltage of +3.3 V and −3.3 V. The device employs CMOS and low voltage transistor transistor logic (LVTTL)-compatible controls. The ADRF5026-EP is pin compatible with the ADRF5027 low frequency cutoff version, which operates from 9 kHz to 44 GHz. The ADRF5026-EP RF ports are designed to match a characteristic impedance of 50 Ohm. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the ADRF5026 data sheet for an example of a matched circuit that achieves a flat insertion loss response of 2.4 dB from 28 GHz to 43 GHz. The ADRF5026-EP comes in a 20-terminal, 3 mm × 3 mm, RoHS compliant, land grid array (LGA) package and can operate from −55 C to +105 C.
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Description
The ADRF5026-EP is a nonreflective, single-pole, double-throw (SPDT) RF switch manufactured in a silicon process. The ADRF5026-EP operates from 100 MHz to 44 GHz with better than 3.8 dB of insertion loss and 45 dB of isolation. The ADRF5026-EP features an all off control, where both RF ports are in an isolation state. The ADRF5026-EP has a nonreflective design and both of the RF ports are internally terminated to 50 Ohm. The ADRF5026-EP requires a dual-supply voltage of +3.3 V and −3.3 V. The device employs CMOS and low voltage transistor transistor logic (LVTTL)-compatible controls. The ADRF5026-EP is pin compatible with the ADRF5027 low frequency cutoff version, which operates from 9 kHz to 44 GHz. The ADRF5026-EP RF ports are designed to match a characteristic impedance of 50 Ohm. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the ADRF5026 data sheet for an example of a matched circuit that achieves a flat insertion loss response of 2.4 dB from 28 GHz to 43 GHz. The ADRF5026-EP comes in a 20-terminal, 3 mm × 3 mm, RoHS compliant, land grid array (LGA) package and can operate from −55 C to +105 C.
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RF and Microwave Switch - ADRF5026SCCZ-EP - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
ADRF5026SCCZ-EP
RF and Microwave Switch ADRF5026SCCZ-EP
The ADRF5026-EP is a nonreflective, single-pole, double-throw (SPDT) RF switch manufactured in a silicon process. The ADRF5026-EP operates from 100 MHz to 44 GHz with better than 3.8 dB of insertion loss and 45 dB of isolation. The ADRF5026-EP features an all off control, where both RF ports are in an isolation state. The ADRF5026-EP has a nonreflective design and both of the RF ports are internally terminated to 50 Ohm. The ADRF5026-EP requires a dual-supply voltage of +3.3 V and −3.3 V. The device employs CMOS and low voltage transistor transistor logic (LVTTL)-compatible controls. The ADRF5026-EP is pin compatible with the ADRF5027 low frequency cutoff version, which operates from 9 kHz to 44 GHz. The ADRF5026-EP RF ports are designed to match a characteristic impedance of 50 Ohm. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the ADRF5026 data sheet for an example of a matched circuit that achieves a flat insertion loss response of 2.4 dB from 28 GHz to 43 GHz. The ADRF5026-EP comes in a 20-terminal, 3 mm × 3 mm, RoHS compliant, land grid array (LGA) package and can operate from −55 C to +105 C.

The ADRF5026-EP is a nonreflective, single-pole, double-throw (SPDT) RF switch manufactured in a silicon process. The ADRF5026-EP operates from 100 MHz to 44 GHz with better than 3.8 dB of insertion loss and 45 dB of isolation. The ADRF5026-EP features an all off control, where both RF ports are in an isolation state. The ADRF5026-EP has a nonreflective design and both of the RF ports are internally terminated to 50 Ohm.

The ADRF5026-EP requires a dual-supply voltage of +3.3 V and −3.3 V. The device employs CMOS and low voltage transistor transistor logic (LVTTL)-compatible controls. The ADRF5026-EP is pin compatible with the ADRF5027 low frequency cutoff version, which operates from 9 kHz to 44 GHz.

The ADRF5026-EP RF ports are designed to match a characteristic impedance of 50 Ohm. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the ADRF5026 data sheet for an example of a matched circuit that achieves a flat insertion loss response of 2.4 dB from 28 GHz to 43 GHz. The ADRF5026-EP comes in a 20-terminal, 3 mm × 3 mm, RoHS compliant, land grid array (LGA) package and can operate from −55 C to +105 C.

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Technical Specifications

  Richardson RFPD
Product Category RF Switches
Product Number ADRF5026SCCZ-EP
Product Name RF and Microwave Switch
Package Type LGA
Frequency Range 100 to 44000 MHz
Insertion Loss 2.2 dB
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