Richardson RFPD RF & MW Power Amplifier ADPA9002ACGZN-R7

Description
The ADPA9002 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), power amplifier that operates between dc and 10 GHz. The amplifier provides 15 dB of gain, 42 dBm of OIP3, and 31.5 dBm of saturated output power (PSAT) while requiring 385 mA from a 12 V supply. The ADPA9002 is self biased in normal operation and has an optional bias control for supply quiescent current (IDQ) adjustment. The amplifier is ideal for military and space and test equipment applications. The ADPA9002 also features inputs and outputs that are internally matched to 50 Ohm, housed in a RoHS compliant, 5 mm × 5 mm LFCSP premolded cavity package, making it compatible with high volume surface-mount technology (SMT) assembly equipment.
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Description
The ADPA9002 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), power amplifier that operates between dc and 10 GHz. The amplifier provides 15 dB of gain, 42 dBm of OIP3, and 31.5 dBm of saturated output power (PSAT) while requiring 385 mA from a 12 V supply. The ADPA9002 is self biased in normal operation and has an optional bias control for supply quiescent current (IDQ) adjustment. The amplifier is ideal for military and space and test equipment applications. The ADPA9002 also features inputs and outputs that are internally matched to 50 Ohm, housed in a RoHS compliant, 5 mm × 5 mm LFCSP premolded cavity package, making it compatible with high volume surface-mount technology (SMT) assembly equipment.
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Suppliers

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RF & MW Power Amplifier - ADPA9002ACGZN-R7 - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
ADPA9002ACGZN-R7
RF & MW Power Amplifier ADPA9002ACGZN-R7
The ADPA9002 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), power amplifier that operates between dc and 10 GHz. The amplifier provides 15 dB of gain, 42 dBm of OIP3, and 31.5 dBm of saturated output power (PSAT) while requiring 385 mA from a 12 V supply. The ADPA9002 is self biased in normal operation and has an optional bias control for supply quiescent current (IDQ) adjustment. The amplifier is ideal for military and space and test equipment applications. The ADPA9002 also features inputs and outputs that are internally matched to 50 Ohm, housed in a RoHS compliant, 5 mm × 5 mm LFCSP premolded cavity package, making it compatible with high volume surface-mount technology (SMT) assembly equipment.

The ADPA9002 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), power amplifier that operates between dc and 10 GHz. The amplifier provides 15 dB of gain, 42 dBm of OIP3, and 31.5 dBm of saturated output power (PSAT) while requiring 385 mA from a 12 V supply. The ADPA9002 is self biased in normal operation and has an optional bias control for supply quiescent current (IDQ) adjustment. The amplifier is ideal for military and space and test equipment applications. The ADPA9002 also features inputs and outputs that are internally matched to 50 Ohm, housed in a RoHS compliant, 5 mm × 5 mm LFCSP premolded cavity package, making it compatible with high volume surface-mount technology (SMT) assembly equipment.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number ADPA9002ACGZN-R7
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
Frequency Range 0.0 to 10000 MHz
Maximum Gain 15 dB
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