Richardson RFPD RF & MW Power Amplifier ADPA7006C-KIT

The ADPA7006CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides 23.5 dB of small signal gain, 29 dBm output power for 1 dB compression, and a typical output third-order intercept of 38 dBm. The ADPA7006CHIP requires 800 mA from a 5 V supply on the supply voltage (VDD), and features inputs and outputs that are internally matched to 50 Ohm, facilitating integration in multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm wire bonds that are less than 0.31 mm long.