Richardson RFPD mmW Power Amplifier ADPA7005CHIP

Description
The ADPA7005CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 17 dB of small signal gain, 31 dBm output power for 1 dB compression (P1dB), and a typical output third-order intercept (IP3) of 41 dBm. The ADPA7005CHIP requires 1200 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.
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Description
The ADPA7005CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 17 dB of small signal gain, 31 dBm output power for 1 dB compression (P1dB), and a typical output third-order intercept (IP3) of 41 dBm. The ADPA7005CHIP requires 1200 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.
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Suppliers

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Product
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mmW Power Amplifier - ADPA7005CHIP - Richardson RFPD
Downers Grove, IL, United States
mmW Power Amplifier
ADPA7005CHIP
mmW Power Amplifier ADPA7005CHIP
The ADPA7005CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 17 dB of small signal gain, 31 dBm output power for 1 dB compression (P1dB), and a typical output third-order intercept (IP3) of 41 dBm. The ADPA7005CHIP requires 1200 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.

The ADPA7005CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 17 dB of small signal gain, 31 dBm output power for 1 dB compression (P1dB), and a typical output third-order intercept (IP3) of 41 dBm. The ADPA7005CHIP requires 1200 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number ADPA7005CHIP
Product Name mmW Power Amplifier
Amplifier Type Power Amplifier
Frequency Range 20000 to 44000 MHz
Maximum Gain 17 dB
Output Power 31 dBm
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