Richardson RFPD RF & MW LNA ADL9006CHIPS

Description
The ADL9006CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates from 2 GHz to 28 GHz. The amplifier provides 15.5 dB of gain, 2.2 dB of noise figure, 24 dBm of output third-order intercept (IP3), 20 dBm of output saturated power (PSAT), and 19 dB of power output for 1 dB compression (P1dB) while requiring a 55 mA power supply current (IDD) from a 5 V total supply voltage. The ADL9006CHIPS is self biased with only a single positive supply needed to achieve an IDD of 55 mA. The ADL9006CHIPS amplifier input and output are internally matched to 50 Ohm facilitating integration into multichip modules (MCMs).
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Description
The ADL9006CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates from 2 GHz to 28 GHz. The amplifier provides 15.5 dB of gain, 2.2 dB of noise figure, 24 dBm of output third-order intercept (IP3), 20 dBm of output saturated power (PSAT), and 19 dB of power output for 1 dB compression (P1dB) while requiring a 55 mA power supply current (IDD) from a 5 V total supply voltage. The ADL9006CHIPS is self biased with only a single positive supply needed to achieve an IDD of 55 mA. The ADL9006CHIPS amplifier input and output are internally matched to 50 Ohm facilitating integration into multichip modules (MCMs).
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Suppliers

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Product
Description
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RF & MW LNA - ADL9006CHIPS - Richardson RFPD
Downers Grove, IL, United States
RF & MW LNA
ADL9006CHIPS
RF & MW LNA ADL9006CHIPS
The ADL9006CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates from 2 GHz to 28 GHz. The amplifier provides 15.5 dB of gain, 2.2 dB of noise figure, 24 dBm of output third-order intercept (IP3), 20 dBm of output saturated power (PSAT), and 19 dB of power output for 1 dB compression (P1dB) while requiring a 55 mA power supply current (IDD) from a 5 V total supply voltage. The ADL9006CHIPS is self biased with only a single positive supply needed to achieve an IDD of 55 mA. The ADL9006CHIPS amplifier input and output are internally matched to 50 Ohm facilitating integration into multichip modules (MCMs).

The ADL9006CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates from 2 GHz to 28 GHz. The amplifier provides 15.5 dB of gain, 2.2 dB of noise figure, 24 dBm of output third-order intercept (IP3), 20 dBm of output saturated power (PSAT), and 19 dB of power output for 1 dB compression (P1dB) while requiring a 55 mA power supply current (IDD) from a 5 V total supply voltage. The ADL9006CHIPS is self biased with only a single positive supply needed to achieve an IDD of 55 mA.

The ADL9006CHIPS amplifier input and output are internally matched to 50 Ohm facilitating integration into multichip modules (MCMs).

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number ADL9006CHIPS
Product Name RF & MW LNA
Amplifier Type Low Noise Amplifier
Frequency Range 2000 to 28000 MHz
Maximum Gain 15.5 dB
Output Power 17 dBm
Noise Figure 2.5 dB
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