Richardson RFPD RF & MW Power Amplifier A5M36TG140-TCT1

Description
The A5M36TG140-TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field proven LDMOS and GaN-on-SiC power amplifiers are designed for TDD LTE and 5G systems. ""TC"" References, Top-Side Cooling, which is a new innovation from NXP that offers improved thermal dissipation.
Request a Quote
Description
The A5M36TG140-TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field proven LDMOS and GaN-on-SiC power amplifiers are designed for TDD LTE and 5G systems. ""TC"" References, Top-Side Cooling, which is a new innovation from NXP that offers improved thermal dissipation.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
RF & MW Power Amplifier - A5M36TG140-TCT1 - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
A5M36TG140-TCT1
RF & MW Power Amplifier A5M36TG140-TCT1
The A5M36TG140-TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field proven LDMOS and GaN-on-SiC power amplifiers are designed for TDD LTE and 5G systems. ""TC"" References, Top-Side Cooling, which is a new innovation from NXP that offers improved thermal dissipation.

The A5M36TG140-TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field proven LDMOS and GaN-on-SiC power amplifiers are designed for TDD LTE and 5G systems. ""TC"" References, Top-Side Cooling, which is a new innovation from NXP that offers improved thermal dissipation.

Supplier's Site

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number A5M36TG140-TCT1
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
Unlock Full Specs
to access all available technical data

Similar Products

RF & MW VGA - ADL5243ACPZ-R7 - Richardson RFPD
Specs
Frequency Range 100 to 4000 MHz
Maximum Gain 33.4 dB
Output Power 26 dBm
View Details
Gain Block - ADL5536ARKZ-R7 - Richardson RFPD
Specs
Frequency Range 20 to 1000 MHz
Maximum Gain 20 dB
Output Power 19.6 dBm
View Details
RF & MW LNA - CHA3024-99F/00 - Richardson RFPD
Specs
Amplifier Type Low Noise Amplifier
Frequency Range 2000 to 22000 MHz
Maximum Gain 15 dB
View Details