The A5G07H800W19NR3 is an 112 W asymmetrical Doherty RF power GaN amplifier designed for cellular base station applications operating between 717 MHz and 850 MHz. It is packaged in an OM-780-4S4S plastic case with an exposed source terminal on the backside. The device operates at a recommended drain voltage of 50 Vdc and can withstand a maximum case temperature of 150 °C and a maximum channel temperature of 225 °C. Thermal resistance from channel to case is 0.6 °C/W. It meets ESD protection standards per Human Body Model (Class 1A) and Charge Device Model (Class C3), and is rated Moisture Sensitivity Level 3 per JESD22-A113. Performance data is guaranteed only within the 717 MHz to 850 MHz band.
The A5G07H800W19 is a 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 717 to 850 MHz. This part is characterized and performance is guaranteed for applications operating in the 717 to 850 MHz band.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | A5G07H800W19NR3 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
