Ampleon RF FETs, MOSFETs CLF3H0060S-10U

The CLF3H0060S-10U is a 10W broadband GaN-SiC HEMT transistor designed for RF power amplification from DC to 6.0 GHz. It is housed in an earless flanged ceramic SOT1227B package with dimensions up to 9.53 mm in height and 5.18 mm in width, featuring a drain connection to the flange. The device operates at 50 V drain-source voltage with a maximum channel temperature of 300 °C, and provides typical power gain of 20.1 dB and drain efficiency of 63% at 2.5 GHz under pulsed CW conditions. It meets ESD sensitivity classification C2A for Charged Device Model and 0B for Human Body Model. The part is RoHS compliant and rated for industrial use, but is not qualified for automotive applications.