100W GaN Doherty power transistor for base station applications in the 2300 MHz to 2700 MHz range, housed in a DFN-7x6.5-6-1 package with an exposed ground backside. Internally matched, designed for broadband operation with low output capacitance, and optimized for high efficiency and digital pre-distortion. Operates with a maximum drain-source voltage of 150 V, supply voltage up to 52 V, and case temperature up to 140 °C. Thermal resistance from channel to case is 6.20 K/W under main amplifier conditions.
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1603-C4H2327N110AXTR-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | 6-VDFN Exposed Pad |
