Fuji Electric Corp. of America Igbt, Dual, Module, 200A, 1200V, Npt; Continuous Collector Current Fuji Electric 2MBI200S-120-50

Dual IGBT module with 1200 V collector-emitter voltage and 200 A continuous collector current, designed for high-power switching and motor control applications. Built with NPT technology, it features a maximum power dissipation of 1500 W and a maximum junction temperature of 150 °C. The module has a thermal resistance of 0.085 °C/W from junction to case for the IGBT and 0.180 °C/W for the diode. Collector-emitter saturation voltage is 2.6 V at 200 A and 25 °C. Isolation voltage is 2500 V AC for 1 minute. Mounting requires a screw torque of 2.5 to 3.5 Nm (M5 or M6), with terminal torque of 3.5 to 4.5 Nm (M6).