IGBT, DUAL, MODULE, 200A, 1200V, NPT; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:2.6V; Power Dissipation:1.5kW; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 56P5428 |
| Product Name | Igbt, Dual, Module, 200A, 1200V, Npt; Continuous Collector Current Fuji Electric |
| PD | 1.50E6 milliwatts |
