BLA1011-10 is an N-channel enhancement mode lateral D-MOS transistor designed for avionics transmitter applications in the 1030 to 1090 MHz frequency range, housed in a 2-lead flange package (SOT467C) with a ceramic cap and source connected to the mounting base. It has a drain-source voltage rating of 75 V, a maximum total power dissipation of 25 W at 25 °C, and a junction temperature limit of 200 °C. The device offers power gain exceeding 15 dB and efficiency above 40% under pulsed class-AB conditions at 36 V drain voltage and 10 W load power, with ruggedness to withstand a VSWR up to 5:1. Thermal impedance from junction to mounting base is 1.2 K/W. The package measures 18.54 mm in height and 9.27 mm in width. The part meets IEC 60134 limiting value standards.
BLA1011-10 - N-Channel LDMOS Avionics LDMOS Transistor
| Rochester Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | BLA1011-10 |
| Polarity | N-Channel |