Fuji Electric Corp. of America Transistor 2SK2688

Description
SILICON N-CHANNEL MOS-FET INTENDED AS HIGH SPEED POWER SWITCH. FREE 2 YEAR RADWELL WARRANTY
  • Transistor - 190106882 - Radwell International
    Radwell International
Description
SILICON N-CHANNEL MOS-FET INTENDED AS HIGH SPEED POWER SWITCH. FREE 2 YEAR RADWELL WARRANTY

Suppliers

Company
Product
Description
Supplier Links
Transistor - 190106882 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
190106882
Transistor 190106882
SILICON N-CHANNEL MOS-FET INTENDED AS HIGH SPEED POWER SWITCH. FREE 2 YEAR RADWELL WARRANTY

SILICON N-CHANNEL MOS-FET INTENDED AS HIGH SPEED POWER SWITCH. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Radwell International
Product Category RF Transistors
Product Number 190106882
Product Name Transistor
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Modules - 6MS24017P43W39873NOSA1-ND - DigiKey
Infineon Technologies AG
IGBT Modules
6MS24017P43W39873NOSA1
Specs
Package Type Module
View Details
2 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SC3117T - 855156-2SC3117T - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SC3117T
2SC3117T
Specs
Package Type SOT3
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor - QPD1029L - Qorvo
Qorvo
1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor
QPD1029L
Specs
Transistor Technology / Material 1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor
Transistor Grade / Operating Range Military
Package Type NI-1230 (Eared)
View Details
2 suppliers