Amphenol Corporation Discrete Semiconductor Products -Transistors- FETs, MOSFETs -RF FETs, MOSFETs ART2K0FEU

The ART2K0FEU is a 2000W LDMOS RF power transistor designed for broadband operation from 1MHz to 400MHz in industrial, scientific, medical, broadcast, and communications applications. It operates with a drain-source voltage up to 65V and is housed in a flanged balanced ceramic package (SOT539AN) with a drain-source breakdown voltage of 203V minimum. The transistor features integrated dual-sided ESD protection, high efficiency up to 83.5%, and thermal resistance from junction to case of 0.077 K/W. It is rated for a maximum junction temperature of 225°C and meets IEC 60134 absolute maximum rating standards. The device is RoHS compliant and qualified for operation under high VSWR conditions up to 65:1. It is supplied in a tray with a minimum order quantity of 60 pieces.