Alpha & Omega Semiconductor, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF11S65 AOTF11S65

Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 078204-AOTF11S65 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 31W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 13.2nC @ 10V Max Input Capacitance: 646pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 399 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 84 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 078204-AOTF11S65 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 31W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 13.2nC @ 10V Max Input Capacitance: 646pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 399 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 84 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF11S65 - 078204-AOTF11S65 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF11S65
078204-AOTF11S65
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF11S65 078204-AOTF11S65
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 078204-AOTF11S65 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 31W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 13.2nC @ 10V Max Input Capacitance: 646pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 399 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 84 pct. Supply and Demand Status: Limited

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 078204-AOTF11S65
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 31W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 13.2nC @ 10V
Max Input Capacitance: 646pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 399 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 078204-AOTF11S65
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF11S65
Polarity N-Channel; N-Channel
V(BR)DSS 650 volts
PD 31000 milliwatts
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