Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOM065V120X2

Description
1200V SILICON CARBIDE MOSFET
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Description
1200V SILICON CARBIDE MOSFET
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Datasheet
Datasheet Summary
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AOM065V120X2 is a 1200 V silicon carbide power MOSFET in a TO-247-4L package, designed for high-efficiency switching applications such as EV chargers, solar inverters, and UPS systems. It has a typical on-resistance of 65 mΩ at 25°C, a continuous drain current of 29.6 A at 100°C, and a pulsed drain current of 85 A. The device features a low reverse recovery charge of 142 nC, a single-pulsed avalanche energy rating of 250 mJ, and a maximum junction temperature of 175°C. It is RoHS compliant and 100% UIS tested, with a junction-to-case thermal resistance of 0.8 °C/W. The part is driven at a recommended gate-source voltage of -5 V to +15 V.

Datasheet Summary
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AOM065V120X2 is a 1200 V silicon carbide power MOSFET in a TO-247-4L package, designed for high-efficiency switching applications such as EV chargers, solar inverters, and UPS systems. It has a typical on-resistance of 65 mΩ at 25°C, a continuous drain current of 29.6 A at 100°C, and a pulsed drain current of 85 A. The device features a low reverse recovery charge of 142 nC, a single-pulsed avalanche energy rating of 250 mJ, and a maximum junction temperature of 175°C. It is RoHS compliant and 100% UIS tested, with a junction-to-case thermal resistance of 0.8 °C/W. The part is driven at a recommended gate-source voltage of -5 V to +15 V.

Suppliers

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Single FETs, MOSFETs - 785-AOM065V120X2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-AOM065V120X2-ND
Single FETs, MOSFETs 785-AOM065V120X2-ND
1200V SILICON CARBIDE MOSFET

1200V SILICON CARBIDE MOSFET

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 785-AOM065V120X2-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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