Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOK065V120X2Q

Description
1200V SILICON CARBIDE MOSFET
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Description
1200V SILICON CARBIDE MOSFET
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Datasheet
Datasheet Summary
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The AOK065V120X2Q is a 1200 V silicon carbide power MOSFET in a TO-247-3L package, designed for automotive and EV charging applications. It has a typical on-resistance of 65 mΩ at 15 V gate drive and a continuous drain current of 85 A at 25°C case temperature. The device features a gate charge of 62.3 nC, reverse recovery charge of 155 nC, and single-pulsed avalanche energy of 250 mJ. Thermal resistance from junction to case is 0.8 °C/W, with a maximum junction temperature of 175°C. It is AEC-Q101 qualified and 100% UIS tested. The package has a lead temperature limit of 300°C for soldering. The device is RoHS compliant.

Datasheet Summary
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The AOK065V120X2Q is a 1200 V silicon carbide power MOSFET in a TO-247-3L package, designed for automotive and EV charging applications. It has a typical on-resistance of 65 mΩ at 15 V gate drive and a continuous drain current of 85 A at 25°C case temperature. The device features a gate charge of 62.3 nC, reverse recovery charge of 155 nC, and single-pulsed avalanche energy of 250 mJ. Thermal resistance from junction to case is 0.8 °C/W, with a maximum junction temperature of 175°C. It is AEC-Q101 qualified and 100% UIS tested. The package has a lead temperature limit of 300°C for soldering. The device is RoHS compliant.

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Single FETs, MOSFETs - 785-AOK065V120X2Q-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-AOK065V120X2Q-ND
Single FETs, MOSFETs 785-AOK065V120X2Q-ND
1200V SILICON CARBIDE MOSFET

1200V SILICON CARBIDE MOSFET

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 785-AOK065V120X2Q-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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