The AOK065V120X2Q is a 1200 V silicon carbide power MOSFET in a TO-247-3L package, designed for automotive and EV charging applications. It has a typical on-resistance of 65 mΩ at 15 V gate drive and a continuous drain current of 85 A at 25°C case temperature. The device features a gate charge of 62.3 nC, reverse recovery charge of 155 nC, and single-pulsed avalanche energy of 250 mJ. Thermal resistance from junction to case is 0.8 °C/W, with a maximum junction temperature of 175°C. It is AEC-Q101 qualified and 100% UIS tested. The package has a lead temperature limit of 300°C for soldering. The device is RoHS compliant.
1200V SILICON CARBIDE MOSFET
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 785-AOK065V120X2Q-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |