Alpha & Omega Semiconductor, Ltd. FET, MOSFET Arrays AO8814

Description
MOSFET 2N-CH 20V 7.5A 8TSSOP
Request a Quote Datasheet
Description
MOSFET 2N-CH 20V 7.5A 8TSSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - AO8814 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
AO8814
FET, MOSFET Arrays AO8814
MOSFET 2N-CH 20V 7.5A 8TSSOP

MOSFET 2N-CH 20V 7.5A 8TSSOP

Supplier's Site Datasheet
FET, MOSFET Arrays - AO8814-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
AO8814-ND
FET, MOSFET Arrays AO8814-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 1.5W Surface Mount 8-TSSOP

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 1.5W Surface Mount 8-TSSOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO8814 - 098345-AO8814 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO8814
098345-AO8814
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO8814 098345-AO8814
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 098345-AO8814 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Family Name: AO8814 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 1.5W Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 15.4nC @ 4.5V Max Input Capacitance: 1390pF @ 10V Maximum Rds On at Id,Vgs: 16 mOhm @ 7.5A, 10V Alternative Parts (Cross-Reference): UPA1870GR-9JG-E1-A; UPA1870GR-9JG-E2; UPA1870GR-9JG-E2-A; Introduction Date: May 02, 1997 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 098345-AO8814
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Family Name: AO8814
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 1.5W
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 15.4nC @ 4.5V
Max Input Capacitance: 1390pF @ 10V
Maximum Rds On at Id,Vgs: 16 mOhm @ 7.5A, 10V
Alternative Parts (Cross-Reference): UPA1870GR-9JG-E1-A; UPA1870GR-9JG-E2; UPA1870GR-9JG-E2-A;
Introduction Date: May 02, 1997
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AO8814 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AO8814
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AO8814
MOSFET 2N-CH 20V 8TSSOP

MOSFET 2N-CH 20V 8TSSOP

Supplier's Site
Trans MOSFET N-CH 20V 7.5A 8-Pin TSSOP - 62-AO8814 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 20V 7.5A 8-Pin TSSOP
62-AO8814
Trans MOSFET N-CH 20V 7.5A 8-Pin TSSOP 62-AO8814
Trans MOSFET N-CH 20V 7.5A 8-Pin TSSOP

Trans MOSFET N-CH 20V 7.5A 8-Pin TSSOP

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number AO8814 AO8814-ND 098345-AO8814 AO8814 62-AO8814
Product Name FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - AO8814 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Trans MOSFET N-CH 20V 7.5A 8-Pin TSSOP
Polarity N-Channel; 2 N-Channel (Dual) Common Drain N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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