Allpower Electronics Singapore PTE.LTD. Transistors AP1606

Description
20V 700mA 180mΩ@2.5V,300mA 550mW 800mV@250uA 1 N-Channel DFN-3L(0.6x1) MOSFETs ROHS
Description
20V 700mA 180mΩ@2.5V,300mA 550mW 800mV@250uA 1 N-Channel DFN-3L(0.6x1) MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - AP1606 - ODG (Origin Data Global)
Shenzhen, China
Transistors
AP1606
Transistors AP1606
20V 700mA 180mΩ@2.5V,300mA 550mW 800mV@250uA 1 N-Channel DFN-3L(0.6x1) MOSFETs ROHS

20V 700mA 180mΩ@2.5V,300mA 550mW 800mV@250uA 1 N-Channel DFN-3L(0.6x1) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AP1606
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - 448-AIMBF170R650M1XTMA1TR-ND - DigiKey
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
View Details
PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER™ MATCHED PAIR - ALD212904PAL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type PDIP8
View Details
4 suppliers
DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor - TGF2933 - Qorvo
Specs
Transistor Technology / Material GaN
Package Type die
View Details
2 suppliers