AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGMH12N10I

Description
100V 65A 96W 9.6mΩ@10V,20A 3V@250uA 1 N-Channel TO-251 MOSFETs ROHS
  • Transistors - AGMH12N10I - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
100V 65A 96W 9.6mΩ@10V,20A 3V@250uA 1 N-Channel TO-251 MOSFETs ROHS
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Transistors - AGMH12N10I - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGMH12N10I
Transistors AGMH12N10I
100V 65A 96W 9.6mΩ@10V,20A 3V@250uA 1 N-Channel TO-251 MOSFETs ROHS

100V 65A 96W 9.6mΩ@10V,20A 3V@250uA 1 N-Channel TO-251 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGMH12N10I
Product Name Transistors
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