AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM60P20AP

Description
60V 10A 57mΩ@10V,5A 3W 1.8V@250uA 1 Piece P-Channel DFN3x3 MOSFETs ROHS
  • Transistors - AGM60P20AP - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
60V 10A 57mΩ@10V,5A 3W 1.8V@250uA 1 Piece P-Channel DFN3x3 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM60P20AP - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM60P20AP
Transistors AGM60P20AP
60V 10A 57mΩ@10V,5A 3W 1.8V@250uA 1 Piece P-Channel DFN3x3 MOSFETs ROHS

60V 10A 57mΩ@10V,5A 3W 1.8V@250uA 1 Piece P-Channel DFN3x3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM60P20AP
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

590A IGBT MODULE FOR ONE PHASE 400/480V - SK-H1-QOUT-D590 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
590A IGBT MODULE FOR ONE PHASE 400/480V
SK-H1-QOUT-D590
Specs
Transistor Type IGBT
View Details
Igbt, 2 Pack Module 1200V, 200A, M234; Continuous Collector Current Fuji Electric - 76R7060 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, 2 Pack Module 1200V, 200A, M234; Continuous Collector Current Fuji Electric
2MBI200U4H-120-50
Specs
Transistor Type IGBT
Package Type TO-3
View Details
GaAs Fet Switches - KS201 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KS201
View Details
- 1EDI3031ASXUMA1 - Rochester Electronics
Infineon Technologies AG
1EDI3031ASXUMA1
Specs
Transistor Type MOSFET
Package Type PG-DSO-2
View Details