AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM418MBP

Description
40V 10A 3.7W 18mΩ@10V,10A 1.6V@250uA 2 N-Channel DFN(3.3x3.3) MOSFETs ROHS
  • Transistors - AGM418MBP - ODG (Origin Data Global)
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Description
40V 10A 3.7W 18mΩ@10V,10A 1.6V@250uA 2 N-Channel DFN(3.3x3.3) MOSFETs ROHS
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Transistors - AGM418MBP - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM418MBP
Transistors AGM418MBP
40V 10A 3.7W 18mΩ@10V,10A 1.6V@250uA 2 N-Channel DFN(3.3x3.3) MOSFETs ROHS

40V 10A 3.7W 18mΩ@10V,10A 1.6V@250uA 2 N-Channel DFN(3.3x3.3) MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM418MBP
Product Name Transistors
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