ALD114904APAL is a dual depletion mode N-channel MOSFET array in a 8-pin plastic DIP package, measuring 9.40 to 11.68 mm in length and 5.59 to 7.11 mm in width, designed for low-voltage, low-power analog applications. The devices are normally on with a gate threshold voltage of -0.40V ±0.02V and exhibit matched characteristics with a threshold voltage offset of 2-7 mV. With VGS = 0.0V, the drain-source on resistance is 5.4 kΩ, and the drain-source breakdown voltage is 10 V. The package is rated for 0°C to +70°C operating temperature and 500 mW power dissipation. The transistors feature high input impedance (10¹² Ω typical), low input capacitance (2.5 pF), and low leakage currents, suitable for precision current mirrors, sub-threshold circuits, and fail-safe applications.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
MOSFET 2N-CH 10.6V 8DIP
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD114904APAL | 1014-1061-ND | ALD114904APAL |
| Product Name | Quad/Dual N-Channel Depletion Mode MOSFET Array/Pair | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Depletion; Precision Depletion Mode | ||
| V(BR)DSS | 10 volts | ||
| IDSS | 3 milliamps |
