AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM30P12D

Description
30V 35A 11mΩ@10V,15A 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS
Request a Quote
Description
30V 35A 11mΩ@10V,15A 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM30P12D - ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM30P12D
Transistors AGM30P12D
30V 35A 11mΩ@10V,15A 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

30V 35A 11mΩ@10V,15A 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM30P12D
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor - TGF2965-SM - Qorvo
Specs
Transistor Technology / Material GaN
Package Type QFN
Transistor Grade / Operating Range Military
View Details
4 suppliers
590A IGBT MODULE FOR ONE PHASE 400/480V - SK-H1-QOUT-D590 - Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
MOSFETs - 1826900 - RS Components, Ltd.
RS Components, Ltd.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT223; Sot-223
View Details