AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM30P100D

Description
30V 128A 120W 3.7mΩ@10V,30A 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS
  • Transistors - AGM30P100D - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 128A 120W 3.7mΩ@10V,30A 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

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Transistors - AGM30P100D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM30P100D
Transistors AGM30P100D
30V 128A 120W 3.7mΩ@10V,30A 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

30V 128A 120W 3.7mΩ@10V,30A 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM30P100D
Product Name Transistors
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