AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM30P08D

Description
30V 60A 60W 7.2mΩ@10V,20A 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS
  • Transistors - AGM30P08D - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
30V 60A 60W 7.2mΩ@10V,20A 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM30P08D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM30P08D
Transistors AGM30P08D
30V 60A 60W 7.2mΩ@10V,20A 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

30V 60A 60W 7.2mΩ@10V,20A 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM30P08D
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

- LM5101AMR/NOPB - Rochester Electronics
Texas Instruments
LM5101AMR/NOPB
Specs
Transistor Type MOSFET
Package Type HSOIC8
View Details
Igbt, Module, Dual N Channel, 1.2Kv, 1.2Ka; Continuous Collector Current Fuji Electric - 54W0215 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, Module, Dual N Channel, 1.2Kv, 1.2Ka; Continuous Collector Current Fuji Electric
2MBI900VXA-120P-50
Specs
Transistor Type IGBT
Polarity N-Channel
Package Type TO-3
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1352E - 855029-2SA1352E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1352E
2SA1352E
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
6-Channel SAB PCB with three mounted ALD910027SALI - SABMB627 - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
6-Channel SAB PCB with three mounted ALD910027SALI
SABMB627
View Details