AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM20T09AT

Name: Transistors
Brand: AGMSEMI Core Control Source Electronic Technology Co., Ltd.

Description

200V 110A 278W 9.3mΩ@10V,35A 3V@250uA 1 N-Channel TO-247 MOSFETs ROHS

Description

200V 110A 278W 9.3mΩ@10V,35A 3V@250uA 1 N-Channel TO-247 MOSFETs ROHS

Suppliers

Company

Product

Description

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Shenzhen, China

Transistors
AGM20T09AT

Transistors AGM20T09AT

200V 110A 278W 9.3mΩ@10V,35A 3V@250uA 1 N-Channel TO-247 MOSFETs ROHS

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JiuJiang Ingiant Technology Co., Ltd.

Fuji Electric Corp. of America

Specs

Transistor Type IGBT

Qorvo

Specs

Transistor Technology / Material DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor

Package Type NI-650 Flanged (Earless)

Transistor Grade / Operating Range Military

2 suppliers

Texas Instruments

Specs

Transistor Type MOSFET

Package Type SOIC8