AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM042N10D

Description
100V 110A 125W 4.1mΩ@10V,20A 1.8V@250uA 1 N-Channel TO-252 MOSFETs ROHS
Request a Quote
Description
100V 110A 125W 4.1mΩ@10V,20A 1.8V@250uA 1 N-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM042N10D - ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM042N10D
Transistors AGM042N10D
100V 110A 125W 4.1mΩ@10V,20A 1.8V@250uA 1 N-Channel TO-252 MOSFETs ROHS

100V 110A 125W 4.1mΩ@10V,20A 1.8V@250uA 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM042N10D
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY - ALD1117SAL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type SOIC8
View Details
5 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2PB709ASL/PA215 - 855010-2PB709ASL/PA215 - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
1150A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
45 V, 500 mA NPN general-purpose transistors - BC817-16,235 - Nexperia B.V.
Specs
Transistor Type BJT
Package Type

-

View Details
7 suppliers