The BLF278 is a dual common source N-channel enhancement-mode RF power MOSFET designed for 175 MHz, 300 W transmitter and amplifier applications. It is packaged in a .385 x .850 inch 4-lead flanged (4LFG) package with pins 1 and 2 as drains, 3 and 4 as gates, and pin 5 as the source. The device has a maximum drain-source voltage of 125 V, continuous drain current of 40 A, and power dissipation of 500 W at 25 °C. It operates with a junction temperature range of -65 °C to +200 °C and has a thermal resistance junction-to-case of 0.35 °C/W. At 175 MHz, it provides 14 to 16 dB power gain and 50 to 55% drain efficiency with a stage efficiency of 0.609 at VSWR = 5:1. The gate threshold voltage is between 1.0 and 5.0 V.
RF MOSFET Transistors RF Transistor
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BLF278 |
| Product Name | RF MOSFET Transistors |
