Advanced Linear Devices, Inc. PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE MATCHED PAIR ALD212908SAL

The ALD212908SAL is a dual precision enhancement mode N-channel EPAD® MOSFET array in an 8-pin SOIC package, designed for low-voltage, low-power analog applications. It features a precisely matched gate threshold voltage of +0.80V ±0.01V, a maximum drain-source voltage of 10V, and an on-resistance of 14Ω at VGS = +5.8V. The device operates with subthreshold currents below 1nA and supports input bias currents under 1nA, enabling nano-power operation down to 800mV. It exhibits matched transconductance and temperature tracking with offset voltage as low as 2mV and a gate threshold voltage temperature coefficient of -1.7mV/°C. The package is rated for operation from 0°C to +70°C and meets RoHS standards. The IC pins are internally connected to V- and must be properly biased.