The ALD212902PAL is an 8-pin plastic dual in-line package (PDIP) containing a precision-matched dual N-channel EPAD® MOSFET array designed for nano-power, low-voltage analog applications. Each device has a precisely controlled gate threshold voltage of +0.20V ±0.02V with a maximum offset voltage of 10mV between the pair. The array operates with sub-threshold currents below 1nA at voltages as low as +0.20V and delivers output currents exceeding 50mA. It features a low on-resistance of 14Ω at VGS = +5.2V, high input impedance of 2.5 × 10¹⁰Ω, and temperature tracking characteristics. The part is rated for an operating temperature range of 0°C to +70°C and complies with RoHS standards. It is suited for current mirrors, differential amplifiers, energy harvesting, and zero-power circuits.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP
MOSFET 2N-CH 10.6V 0.08A 8DIP
MOSFET Dual N-Ch Matched Pr VGS=0.0V
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | ALD212902PAL | ALD212902PAL-ND | ALD212902PAL | ALD212902PAL |
| Product Name | PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER™ MATCHED PAIR | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | |||
| V(BR)DSS | 10 volts | |||
| IDSS | 79 milliamps |
