The ALD110902SAL is a dual N-channel enhancement mode MOSFET array fabricated using EPAD™ CMOS technology for precision matched pair applications in low-voltage, low-power analog circuits. It is housed in an 8-pin small outline integrated circuit (SOIC) package with dimensions of 4.69-5.00 mm in length and 3.50-4.05 mm in width. The device features a gate threshold voltage of +0.20 V with a threshold voltage match of 10 mV between matched pairs, and operates within a temperature range of 0°C to +70°C. It exhibits a typical input leakage current of 30 pA at 25°C, a maximum drain-source voltage of 10.6 V, and a power dissipation rating of 500 mW. The part meets RoHS compliance and is suitable for sub-threshold operation, current mirrors, and high-impedance buffer applications.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 500mW Surface Mount 8-SOIC
MOSFET 2N-CH 10.6V 8SOIC
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD110902SAL | 1014-1035-ND | ALD110902SAL |
| Product Name | EVICES, INC. QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | ||
| V(BR)DSS | 10 volts | ||
| IDSS | 3 milliamps |
