The ALD1101 is a monolithic dual N-channel matched MOSFET pair designed for precision analog applications such as current mirrors, differential amplifiers, and analog switches. It is available in an 8-pin plastic DIP package with dimensions of 9.40 to 11.68 mm in length and 5.59 to 7.11 mm in width. The device operates from 0°C to +70°C, features a low threshold voltage of 0.4V to 1.0V, and exhibits a gate leakage current of 100 pA at 25°C, extending to 10 nA at 125°C. It has a typical input impedance of 10^12 Ω and a DC current gain of 10^9, with drain-source breakdown voltage of 10 V. The ALD1101 is RoHS compliant and suitable for use in low-voltage systems up to +10 V.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 500mW Through Hole 8-PDIP
MOSFET 2N-CH 10.6V 8DIP
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD1101BPAL | ALD1101BPAL-ND | ALD1101BPAL |
| Product Name | Dual N-Channel Matched MOSFET Pair | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Enhancement Mode | ||
| V(BR)DSS | 12 volts | ||
| IDSS | 40 milliamps |
