Rochester Electronics IGBTs - Single - RJP30E2DPP-M0#T2 RJP30E2DPP-M0#T2

The RJP30E2DPP-M0 is a silicon N-channel IGBT designed for high-speed power switching, featuring trench gate technology. It is packaged in a TO-220FL case with a mass of 1.5 g. The device has a collector-to-emitter voltage rating of 360 V, a continuous collector current of 35 A, and a peak collector current of 200 A under pulsed conditions. Its collector-to-emitter saturation voltage is 1.7 V typical at 35 A and 15 V gate-emitter bias. Switching times are 150 ns typical for fall time, with a total gate charge of 34 nC. The junction-to-case thermal impedance is 5 °C/W, and the maximum junction temperature is 150 °C.