Rochester Electronics Memory 71T75602S166BGG

Description
IC SRAM 18MBIT PARALLEL 119PBGA
  • Memory - 71T75602S166BGG - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
IC SRAM 18MBIT PARALLEL 119PBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71T75602S166BGG - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
71T75602S166BGG
Memory 71T75602S166BGG
IC SRAM 18MBIT PARALLEL 119PBGA

IC SRAM 18MBIT PARALLEL 119PBGA

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number 71T75602S166BGG
Product Name Memory
Memory Category SRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

SN54ABT7819 512 x 18 x 2 Synchronous Bidirectional FIFO Memory - 5962-9470401QXA - Texas Instruments
Texas Instruments
SN54ABT7819 512 x 18 x 2 Synchronous Bidirectional FIFO Memory
5962-9470401QXA
Specs
Memory Category FIFO
Package Type CPGA
View Details
3 suppliers
Memory - 6116SA20TPGI - Lingto Electronic Limited
Rochester Electronics
Memory
6116SA20TPGI
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 16 kbits
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821404VXF - 5962R1821404VXF - Infineon Technologies AG
Infineon Technologies AG
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821404VXF
5962R1821404VXF
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 144000 kbits
Number of Words 4 k
View Details
Memory - AS5SS256K36 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5SS256K36
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 2048 kbits
View Details