Qorvo 2 - 20 GHz, 2 Watt GaN Amplifier QPA2213

Description
Qorvo's QPA2213 is a packaged wide band driver amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 2.0 - 20.0 GHz, the QPA2213 provides > 2 W of saturated output power and 16 dB of large-signal gain while achieving > 23% power added efficiency. The QPA2213 is packaged in a 4.5 x 4.5 mm laminate package. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. The QPA2213 has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA2213 is ideal for both commercial and military wide band or narrow band systems. Lead-free and RoHS compliant. For additional information on GaN thermal performance refer to the following application note and video.
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Description
Qorvo's QPA2213 is a packaged wide band driver amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 2.0 - 20.0 GHz, the QPA2213 provides > 2 W of saturated output power and 16 dB of large-signal gain while achieving > 23% power added efficiency. The QPA2213 is packaged in a 4.5 x 4.5 mm laminate package. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. The QPA2213 has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA2213 is ideal for both commercial and military wide band or narrow band systems. Lead-free and RoHS compliant. For additional information on GaN thermal performance refer to the following application note and video.
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Suppliers

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2 - 20 GHz, 2 Watt GaN Amplifier - QPA2213 - Qorvo
Greensboro, NC, United States
2 - 20 GHz, 2 Watt GaN Amplifier
QPA2213
2 - 20 GHz, 2 Watt GaN Amplifier QPA2213
Qorvo's QPA2213 is a packaged wide band driver amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 2.0 - 20.0 GHz, the QPA2213 provides > 2 W of saturated output power and 16 dB of large-signal gain while achieving > 23% power added efficiency. The QPA2213 is packaged in a 4.5 x 4.5 mm laminate package. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. The QPA2213 has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA2213 is ideal for both commercial and military wide band or narrow band systems. Lead-free and RoHS compliant. For additional information on GaN thermal performance refer to the following application note and video.

Qorvo's QPA2213 is a packaged wide band driver amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 2.0 - 20.0 GHz, the QPA2213 provides > 2 W of saturated output power and 16 dB of large-signal gain while achieving > 23% power added
efficiency.
The QPA2213 is packaged in a 4.5 x 4.5 mm laminate package. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages.
The QPA2213 has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA2213 is ideal for both commercial and military wide band or narrow band systems.
Lead-free and RoHS compliant.

For additional information on GaN thermal performance refer to the following application note and video.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Amplifiers
Product Number QPA2213
Product Name 2 - 20 GHz, 2 Watt GaN Amplifier
Applications Military / Defense; Radar Systems
RoHS Compliant RoHS
Frequency Range 2000 to 20000 MHz
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